Adgex AIDELab
is a structural division of ADGEX LTD Company, developing state-of-the-art solutions in the domains of electronics and material engineering. AIDELab represents a modern center of unique competencies, encapsulating several key technologies in the fields of single crystals growth and the newest intellectual microelectronics.

Project Manager

Vladimir Zasemkov
Dr. Zasemkov is a founder of modern vacuum electronics in microelectronic field, capable of creating a whole new generation of the electronics. Previously Dr. Zasemkov held senior positions in various international companies, including SI Diamond Technology Inc. in Austin, Tx, USA. Since 1989 he has headed the laboratory of "Vacuum microelectronics".

AIDELab Timeline

AIDELab Timeline

February
Setting up of the 2nd Design-center on engineering of instrument-making facility within the launch of the 1st laboratory AIDL AIDELab
January
Establishment of an electronic laboratory within the launch of the first lab of AIDL AIDELab format
January
Purchase of component parts and materials to set up a laboratory AIDL AIDELab
September
Establishment of the first Design-center within the scope of AIDL AIDELab Program
August
Signing of MoU and Cooperation Agreement by ADGEX, TOKYO BOEKI GROUP and YOKOGAWA Companies for delivery of the first minimalFAB units in favour of ADGEX AIDELab
August
Official start of the AIDELab project
March
Launch and approbation of the first atmosphere growth chamber. Proof of single crystal growth technology
October
Development analysis of the global microelectronic production, revelation of a new tendencies and trends. Building up of a business concept and business-model AIDELab in AIDL format
September
Presentation of the project “Design of transmitter-receiver” for internet of things at the microelectronic start-up competition “Festival of Innovations” in the city of Alushta, Russian Federation
September
Presentation of design & technological basis of an electronic component basis for VIS, premised on ballistic transportation of charge carriers at the International Forum “Microelectronics 2016” in the city of Alushta, Russian Federation
May
Presentation of the project “Cathode-luminescent lamp with controlled light intensity” at the conference “Contemporary issues in microelectronics”, Krasnoyarsk, Russian Federation
January
Production of the first atmosphere growth chamber for synthesis of ideal crystals
2015
Conceptualization of terahertz transmitter-receiver for internet of things. Prototyping of cathode-luminescent lamp for highly-efficient lighting systems
December
The project “Neuromorphic chip AIDELab” wins in nomination of “high-speed computations” in IT-projects “MORE THAN MOORE” (Skolkovo, Russian Federation)
October
Design and development of the first atmosphere growth chamber for synthesis of ideal crystals
2012
Conceptualization of neuromorphic chip AIDELab
2010
Development of a design & technological basis, formation of an electronic component basis for VIS
2001
Development of a design & technological basis for production of vacuum integrated systems (VIS). Patenting of new VIS developments
1998
Production of the upgraded prototype of the next-generation mini-display under the VIS technology
1993 - 1996
Production of field emission display in association with SI-diamond technology (Austin, TX, USA)
July 1993
Presentation of the world’s first prototype of cathode-luminescent display at the 6th international vacuum microelectronic conference in Newport, Rhode Island, USA
1993
Patenting of the VIS technology
February 1993
Joint tests of cathode-luminescent display in Moscow Research Institute of Television
October 1992
International presentation of the world’s first prototype of cathode-luminescent display
December 1990
Setting up of a vacuum microelectronic laboratory
1990
Production of the world’s first experimental prototypes of cathode-luminescent displays under the VIS technology
1988
Design of a planar cell layout on a dielectric substrate under the VIS technology
1996
Design of documentation and production technology of a field-emission cathode on a silicon substrate